MILPITAS, Calif., August 3, 2015– SanDisk Corporation (NASDAQ: SNDK), a world leader in flash storage methods, declared right now its 256 Gigabit (Gb) 3-little bit-per-mobile (X3) forty eight-layer 3D NAND chip and the start off of 3D NAND pilot line operations in Yokkaichi, Japan in conjunction with its associate, Toshiba.
“We are happy to announce our 1st 3D NAND chip targeted for creation,” said Dr. Siva Sivaram, govt vice president, memory technological innovation, SanDisk. “This is the world’s 1st 256 Gb X3 chip, designed making use of our marketplace-foremost forty eight-layer BiCS technological innovation1 and demonstrating SanDisk’s continued leadership in X3 technological innovation. We will use this chip to provide powerful storage methods for our prospects.”
BiCS is a nonvolatile memory architecture designed to provide new degrees of density, scalability and performance to flash-based gadgets. BiCS NAND memory will also give increased generate/erase stamina, generate speeds and energy efficiency relative to regular Second NAND.
SanDisk’s 256 Gb X3 BiCS chip is designed for wide applicability in consumer, client, cell and company solutions, and is envisioned to get started transport in SanDisk’s solutions in 2016.
SanDisk Corporation (NASDAQ: SNDK), a Fortune 500 and S&P 500 organization, is a world leader in flash storage methods. For much more than 27 several years, SanDisk has expanded the prospects of storage, delivering reliable and innovative solutions that have reworked the electronics marketplace. Right now, SanDisk’s top quality, state-of-the-artwork methods are at the heart of quite a few of the world’s major knowledge centers, and embedded in superior smartphones, tablets and PCs. SanDisk’s consumer solutions are obtainable at hundreds of thousands of retail merchants all over the world. For much more information, take a look at www.sandisk.com.
1 – SanDisk study, as of August 3, 2015.